中国科学院半导体研究所研究员赵德刚只做国家有需要的研究融入科研管理系统强调效率与质量之对偶
赵德刚，中国科学院半导体研究所的研究员，在20多年的职业生涯中，他几乎每天都在实验室里忙碌。他的专业是半导体光电子材料与器件，这是信息时代的基石。在这个朝阳产业中，他没有追求高产新型材料，而是坚守传统材料——氮化镓，并钻研到深水区，克服种种困难，带领团队研制出国内第一支氮化镓基紫外激光器、大功率蓝光激光器。
他自称是国家培养出来的“土著科研人”，用实际行动回报祖国。他说：“作为一名科研人，国家的需要在哪里，我研究方向就在哪里。”他所面临的是艰难的领域巨大的难题。
赵德刚发现中国对半导体器件需求巨大，但世界上生产该类器件原材料尚未成熟，所以他选择了氮化镓光电子材料与器件研究。氮化镓是一种继硅、砷化镓之后的第三代半导体，其应用潜力巨大。目前基于氮化镓材料的蓝光发光二极管已经走进千家万户，被誉为照明产业革命。
但激光器技术更为复杂，是国际合金半导体研究热点和制高点。赵德刚解释道，要做出蓝光激 光器，就必须生长出高质量的氮化镓外延材料。但由于缺乏匹配衬底，这一直困扰着世界各国学者。
Zhao De Gāng, a researcher at the Institute of Semiconductor in Chinese Academy of Sciences (CAS), has been dedicated to his work for over 20 years. He is an expert in the field of semiconductor light-electronic materials and devices, which are the foundation of the information era. In this sunrise industry, he chose not to pursue new high-yield materials but instead focused on traditional ones - gallium nitride (GaN) - and delved into its deep waters, overcoming numerous challenges. His team developed domestically first GaN-based ultraviolet laser diodes and high-power blue laser diodes.
As a "native scientist" nurtured by the country, Zhao De Gāng is committed to repaying his motherland through practical actions. He believes that as a scientist, one should follow where national needs lie. The two main categories in semiconductor research are microelectronics and optoelectronics; integrated circuits and transistors belong to microelectronics while lasers and related products fall under optoelectronics.
In the late 1990s when China's microelectronics industry was relatively backward after studying electronics at Tsinghua University for seven years, Zhao De Gāng was fascinated by this field during his time there. During this period he applied to join the Communist Party.
In 1997 upon entering CAS's Institute of Semiconductor further study, Zhao discovered that China had immense demand for semiconductors but lacked mature production technology abroad: "This is why I chose gallium nitride optoelectronic material & device research." GaN is known as the third generation semiconductor following silicon and indium gallium arsenide phosphide (InGaAsP), covering near-infrared to deep ultraviolet wavelengths with excellent thermal stability resistance against breakdowns corrosion applications in both opto- electronic & semi-conductor fields holding vast potential application scope.
Currently based on GaN material blue LED has entered thousands households triggering illumination revolution Japan scholars Akasaki Hiroshi Yamamoto Hiroshi Yoshida Shuji also won Nobel Prize Physics in 2014 for inventing efficient blue-light-emitting diode
Zhao De Gāng's team successfully grew high-quality GaN film exceeding international standards marking significant breakthrough though still far from Japanese counterparts' level.
He revealed: "I am committed solely to state-defined scientific pursuits — if they require me to delve deeper into problems or venture forth into new areas." With such dedication he made pioneering discoveries including development world-class quality epitaxial layer growth techniques leading domestic optical communication systems innovation driving global advancements
His relentless pursuit saw him explore novel ways improving efficiency reducing costs ensuring technological superiority nationally internationally thereby securing leadership roles prestigious awards making lasting impact globally
